OSG55R190DF datasheet, аналоги, основные параметры

Наименование производителя: OSG55R190DF  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 104 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 550 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.7 ns

Cossⓘ - Выходная емкость: 125.9 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: TO252

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Аналог (замена) для OSG55R190DF

- подборⓘ MOSFET транзистора по параметрам

 

OSG55R190DF даташит

 ..1. Size:1119K  oriental semi
 osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf pdf_icon

OSG55R190DF

OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera

 ..2. Size:980K  oriental semi
 osg55r190df.pdf pdf_icon

OSG55R190DF

OSG55R190DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:939K  oriental semi
 osg55r190ff.pdf pdf_icon

OSG55R190DF

OSG55R190FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:401K  oriental semi
 osg55r190af.pdf pdf_icon

OSG55R190DF

OSG55R190AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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Другие IGBT... UPA2670T1R, UPA2672T1R, UPA2680T1E, UPA2700GR, STQ1NC45, RU7088R3, PTP04N04N, OSG55R190AF, IRF740, OSG55R190FF, OSG55R190PF, MDU2657, JCS4N60V, JCS4N60R, JCS4N60S, JCS4N60B, JCS4N60C