OSG55R190DF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG55R190DF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6.7 ns
Cossⓘ - Выходная емкость: 125.9 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
OSG55R190DF Datasheet (PDF)
osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf

OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera
osg55r190df.pdf

OSG55R190DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r190ff.pdf

OSG55R190FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r190af.pdf

OSG55R190AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MTC6601N6 | AP2306CGN-HF | NP80N04DHE | BUK9K17-60E | SWF6N65K | AOD504 | BUZ78
History: MTC6601N6 | AP2306CGN-HF | NP80N04DHE | BUK9K17-60E | SWF6N65K | AOD504 | BUZ78



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