OSG55R190DF Datasheet and Replacement
Type Designator: OSG55R190DF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 125.9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO252
OSG55R190DF substitution
OSG55R190DF Datasheet (PDF)
osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf

OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera
osg55r190df.pdf

OSG55R190DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r190ff.pdf

OSG55R190FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r190af.pdf

OSG55R190AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: UPA2670T1R , UPA2672T1R , UPA2680T1E , UPA2700GR , STQ1NC45 , RU7088R3 , PTP04N04N , OSG55R190AF , IRF840 , OSG55R190FF , OSG55R190PF , MDU2657 , JCS4N60V , JCS4N60R , JCS4N60S , JCS4N60B , JCS4N60C .
History: 2SK3642-ZK
Keywords - OSG55R190DF MOSFET datasheet
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History: 2SK3642-ZK



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