OSG55R190DF MOSFET Datasheet: N-Ch, 550V, 20A. Full specification with pinout and replacement list

OSG55R190DF Specs and Replacement

Type Designator: OSG55R190DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 125.9 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO252

OSG55R190DF substitution

- MOSFET ⓘ Cross-Reference Search

OSG55R190DF datasheet

..1. Size:1119K oriental semi
osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf pdf_icon

OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera... See More ⇒

..2. Size:980K oriental semi
osg55r190df.pdf pdf_icon

OSG55R190DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

5.1. Size:939K oriental semi
osg55r190ff.pdf pdf_icon

OSG55R190FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

5.2. Size:401K oriental semi
osg55r190af.pdf pdf_icon

OSG55R190AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒