RFP2N10L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFP2N10L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 80(max) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.05 Ohm
Paquete / Cubierta: TO220AB
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RFP2N10L Datasheet (PDF)
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Otros transistores... RFP15P05 , RFP15P05SM , RFP15P06 , RFP22N10 , RFP25N05 , RFP25N05L , RFP25N06 , RFP2N08L , IRFP250 , RFP2N20 , RFP2N20L , RFP3055 , RFP3055LE , RFP30N06LE , RFP30P05 , RFP30P06 , RFP40N10 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918