RFP2N10L Specs and Replacement

Type Designator: RFP2N10L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 80 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO220AB

RFP2N10L substitution

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RFP2N10L datasheet

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 rfp2n08l rfp2n10l.pdf pdf_icon

RFP2N10L

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, Features N-Channel Power MOSFETs 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050 mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drives designed for use with logic level (5V) driving sources i... See More ⇒

 7.1. Size:87K  njs
 rfp2n08 rfp2n10.pdf pdf_icon

RFP2N10L

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RFP2N10L

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 9.1. Size:342K  fairchild semi
 rfp2n20l.pdf pdf_icon

RFP2N10L

RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, Features N-Channel Power MOSFET 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistor is specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, autom... See More ⇒

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Detailed specifications: RFP15P05, RFP15P05SM, RFP15P06, RFP22N10, RFP25N05, RFP25N05L, RFP25N06, RFP2N08L, BS170, RFP2N20, RFP2N20L, RFP3055, RFP3055LE, RFP30N06LE, RFP30P05, RFP30P06, RFP40N10

Keywords - RFP2N10L MOSFET specs

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