AON6718L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6718L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10.7 nS
Cossⓘ - Capacitancia de salida: 693 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AON6718L MOSFET
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AON6718L datasheet
aon6718l.pdf
AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V) ideally suited for use as a low side switch in CPU core RDS(ON)
aon6716.pdf
AON6716 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6712.pdf
AON6712 30V N-Channel MOSFET SRFET TM General Description Product Summary The AON6712 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 20A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON)
aon6710.pdf
AON6710 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6710 uses advanced trench ID = 20A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON)
Otros transistores... US6K1, US6K2, US6K4, US6M1, US6M11, US6M2, US6U37, AM4437P, 8205A, APM3009NF, APM3009NG, APM3009NU, APM3023NU, APM3023NV, APM3023NF, SI4834BDY, SI4856DY
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