AON6718L Datasheet and Replacement. Cross Reference Search

AON6718L Datasheet (PDF)

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AON6718LN-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesSRFETTM AON6718L uses advanced trench technology VDS (V) = 30Vwith a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V)ideally suited for use as a low side switch in CPU core RDS(ON)

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AON671630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS 30VSRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

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AON671230V N-Channel MOSFETSRFET TM General Description Product SummaryThe AON6712 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 20A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)

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AON671030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM The AON6710 uses advanced trenchID = 20A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gateRDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .