EKI06075 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EKI06075 Datasheet (PDF)

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60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET EKI06075 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 78 A D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate

..2. Size:251K inchange semiconductor
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isc N-Channel MOSFET Transistor EKI06075FEATURESDrain Current I =78A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET EKI06051 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate

8.2. Size:251K inchange semiconductor
eki06051.pdf pdf_icon

isc N-Channel MOSFET Transistor EKI06051FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose