EKI06075 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: EKI06075
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 116 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 78 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 57.2 nC
Время нарастания (tr): 7.4 ns
Выходная емкость (Cd): 420 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0066 Ohm
Тип корпуса: TO-220
EKI06075 Datasheet (PDF)
eki06075.pdf
60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET EKI06075 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 78 A D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate
eki06075.pdf
isc N-Channel MOSFET Transistor EKI06075FEATURESDrain Current I =78A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
eki06051.pdf
60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET EKI06051 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate
eki06051.pdf
isc N-Channel MOSFET Transistor EKI06051FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
eki06108.pdf
60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET EKI06108 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 57 A D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate
eki06108.pdf
isc N-Channel MOSFET Transistor EKI06108FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
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