EKI06075 PDF and Equivalents Search

 ..1. Size:246K  sanken-ele
 eki06075.pdf

60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET EKI06075 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 78 A D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate... See More ⇒

 ..2. Size:251K  inchange semiconductor
 eki06075.pdf

isc N-Channel MOSFET Transistor EKI06075 FEATURES Drain Current I =78A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 6.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 8.1. Size:246K  sanken-ele
 eki06051.pdf

60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET EKI06051 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate... See More ⇒

 8.2. Size:251K  inchange semiconductor
 eki06051.pdf

isc N-Channel MOSFET Transistor EKI06051 FEATURES Drain Current I =85A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 4.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 9.1. Size:246K  sanken-ele
 eki06108.pdf

60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET EKI06108 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 57 A D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate... See More ⇒

 9.2. Size:254K  inchange semiconductor
 eki06108.pdf

isc N-Channel MOSFET Transistor EKI06108 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒