EKI06075
MOSFET. Datasheet pdf. Equivalent
Type Designator: EKI06075
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 116
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 78
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 57.2
nC
trⓘ - Rise Time: 7.4
nS
Cossⓘ -
Output Capacitance: 420
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066
Ohm
Package:
TO-220
EKI06075
Datasheet (PDF)
..1. Size:246K sanken-ele
eki06075.pdf 
60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET EKI06075 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 78 A D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate
..2. Size:251K inchange semiconductor
eki06075.pdf
isc N-Channel MOSFET Transistor EKI06075FEATURESDrain Current I =78A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.1. Size:246K sanken-ele
eki06051.pdf
60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET EKI06051 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate
8.2. Size:251K inchange semiconductor
eki06051.pdf
isc N-Channel MOSFET Transistor EKI06051FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:246K sanken-ele
eki06108.pdf
60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET EKI06108 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 57 A D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate
9.2. Size:254K inchange semiconductor
eki06108.pdf
isc N-Channel MOSFET Transistor EKI06108FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
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