RFP4N100 Todos los transistores

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RFP4N100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP4N100

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 1000 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 4.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 3.5 Ohm

Empaquetado / Estuche: TO220AB

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RFP4N100 Datasheet (PDF)

1.1. rfp4n100 rf1s4n100sm.pdf Size:93K _fairchild_semi

RFP4N100
RFP4N100

RFP4N100, RF1S4N100SM Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, High Voltage, Features N-Channel Power MOSFETs • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel • rDS(ON) = 3.500Ω enhancement mode silicon gate power field effect • UIS Rating Curve (Single Pulse) transistors. They are designed for use in applications such as switching regulators, switching conver

5.1. rfl2n05l rfl2n06l rfp4n05l rfp4n06l.pdf Size:255K _njs

RFP4N100
RFP4N100



5.2. rfp4n05l rfp4n06l.pdf Size:40K _intersil

RFP4N100
RFP4N100

RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, Features N-Channel Power MOSFETs • 4A, 50V and 60V The RFP4N05L and RFP4N06L are N-Channel enhancement • rDS(ON) = 0.800Ω mode silicon gate power field effect transistors designed for • Design Optimized for 5V Gate Drives applications such as switching regulators, switching conv

Otros transistores... RFP30P05 , RFP30P06 , RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L , 2N3824 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L .

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