All MOSFET. RFP4N100 Datasheet

 

RFP4N100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFP4N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120(max) nC
   trⓘ - Rise Time: 50(max) nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO220AB

 RFP4N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFP4N100 Datasheet (PDF)

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RFP4N100, RF1S4N100SMData Sheet January 20024.3A, 1000V, 3.500 Ohm, High Voltage, FeaturesN-Channel Power MOSFETs 4.3A, 1000VThe RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse)transistors. They are designed for use in applications such as switching regulators, switching conver

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RFM4N35, RFM4N40, RFP4N35, RFP4N40SemiconductorData Sheet October 1998 File Number 1491.34A, 350V and 400V, 2.000 Ohm, N-Channel FeaturesPower MOSFETs 4A, 350V and 400V[ /Title[ /TitleThese are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000(RFM4N()power field effect transistors designed for applications such35, Related Literature/Sub- as switchi

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RFP4N05L, RFP4N06LData Sheet July 1999 File Number 2876.24A, 50V and 60V, 0.800 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 4A, 50V and 60VThe RFP4N05L and RFP4N06L are N-Channel enhancement rDS(ON) = 0.800mode silicon gate power field effect transistors designed for Design Optimized for 5V Gate Drivesapplications such as switching regulators, switchingconv

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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