RFP4N100. Аналоги и основные параметры

Наименование производителя: RFP4N100

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 max ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm

Тип корпуса: TO220AB

Аналог (замена) для RFP4N100

- подборⓘ MOSFET транзистора по параметрам

 

RFP4N100 даташит

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RFP4N100, RF1S4N100SM Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, High Voltage, Features N-Channel Power MOSFETs 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500 enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse) transistors. They are designed for use in applications such as switching regulators, switching conver

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RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Features Power MOSFETs 4A, 350V and 400V [ /Title [ /Title These are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000 (RFM4N () power field effect transistors designed for applications such 35, Related Literature /Sub- as switchi

 9.3. Size:40K  intersil
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RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, Features N-Channel Power MOSFETs 4A, 50V and 60V The RFP4N05L and RFP4N06L are N-Channel enhancement rDS(ON) = 0.800 mode silicon gate power field effect transistors designed for Design Optimized for 5V Gate Drives applications such as switching regulators, switching conv

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Другие IGBT... RFP30P05, RFP30P06, RFP40N10, RFP40N10LE, RFP45N06, RFP45N06LE, RFP4N05L, RFP4N06L, STF13NM60N, RFP50N05L, RFP50N06, RFP50N06LE, RFP60P03, RFP70N03, RFP70N06, RFP7N10LE, RFP8N20L