ELM16800EA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM16800EA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.15 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 3.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
Carga de la puerta (Qg): 4.96 nC
Tiempo de subida (tr): 3.6 nS
Conductancia de drenaje-sustrato (Cd): 54.5 pF
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: SOT-26
Búsqueda de reemplazo de MOSFET ELM16800EA
ELM16800EA Datasheet (PDF)
elm16800ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Dual N-channel MOSFETELM16800EA-SGeneral description Features ELM16800EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=3.4A (Vgs=10V) Rds(on)
elm16405ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Single P-channel MOSFETELM16405EA-SGeneral description Features ELM16405EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V)resistance. Rds(on)
elm16408ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Single N-channel MOSFETELM16408EA-SGeneral description Features ELM16408EA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)
elm16601ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Complementary MOSFET ELM16601EA-SGeneral Description Features ELM16601EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on)
elm16401ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Single P-channel MOSFETELM16401EA-SGeneral description Features ELM16401EA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)
elm16402ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Single N-channel MOSFETELM16402EA-SGeneral description Features ELM16402EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=6.9A (Vgs=10V)resistance. Rds(on)
elm16409ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Single P-channel MOSFETELM16409EA-SGeneral description Features ELM16409EA-S uses advanced trench technology Vds=-20Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)
elm16604ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Complementary MOSFET ELM16604EA-SGeneral Description Features ELM16604EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Id=3.4A(Vgs=4.5V) Id=-2.5A(Vgs=-4.5V) Rds(on)
elm16403ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Single P-channel MOSFETELM16403EA-SGeneral description Features ELM16403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)
elm16400ea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Single N-channel MOSFETELM16400EA-SGeneral description Features ELM16400EA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=6.9A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .