ELM16800EA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM16800EA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 VQgⓘ - Carga de la puerta: 4.96 nC
trⓘ - Tiempo de subida: 3.6 nS
Cossⓘ - Capacitancia de salida: 54.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: SOT-26
Búsqueda de reemplazo de MOSFET ELM16800EA
ELM16800EA Datasheet (PDF)
elm16800ea.pdf
Dual N-channel MOSFETELM16800EA-SGeneral description Features ELM16800EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=3.4A (Vgs=10V) Rds(on)
elm16405ea.pdf
Single P-channel MOSFETELM16405EA-SGeneral description Features ELM16405EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V)resistance. Rds(on)
elm16408ea.pdf
Single N-channel MOSFETELM16408EA-SGeneral description Features ELM16408EA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)
elm16601ea.pdf
Complementary MOSFET ELM16601EA-SGeneral Description Features ELM16601EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on)
elm16401ea.pdf
Single P-channel MOSFETELM16401EA-SGeneral description Features ELM16401EA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)
elm16402ea.pdf
Single N-channel MOSFETELM16402EA-SGeneral description Features ELM16402EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=6.9A (Vgs=10V)resistance. Rds(on)
elm16409ea.pdf
Single P-channel MOSFETELM16409EA-SGeneral description Features ELM16409EA-S uses advanced trench technology Vds=-20Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)
elm16604ea.pdf
Complementary MOSFET ELM16604EA-SGeneral Description Features ELM16604EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Id=3.4A(Vgs=4.5V) Id=-2.5A(Vgs=-4.5V) Rds(on)
elm16403ea.pdf
Single P-channel MOSFETELM16403EA-SGeneral description Features ELM16403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)
elm16400ea.pdf
Single N-channel MOSFETELM16400EA-SGeneral description Features ELM16400EA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=6.9A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPP80P03P4L-04
History: IPP80P03P4L-04
Liste
Recientemente añadidas las descripciónes de los transistores:
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