ELM16800EA MOSFET Datasheet: N-Ch, 30V, 3.4A. Full specification with pinout and replacement list

ELM16800EA Specs and Replacement

Type Designator: ELM16800EA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 54.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-26

ELM16800EA substitution

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ELM16800EA datasheet

..1. Size:385K elm
elm16800ea.pdf pdf_icon

Dual N-channel MOSFET ELM16800EA-S General description Features ELM16800EA-S uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=3.4A (Vgs=10V) Rds(on) ... See More ⇒

9.1. Size:413K elm
elm16405ea.pdf pdf_icon

Single P-channel MOSFET ELM16405EA-S General description Features ELM16405EA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V) resistance. Rds(on) ... See More ⇒

9.2. Size:438K elm
elm16408ea.pdf pdf_icon

Single N-channel MOSFET ELM16408EA-S General description Features ELM16408EA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒

9.3. Size:579K elm
elm16601ea.pdf pdf_icon

Complementary MOSFET ELM16601EA-S General Description Features ELM16601EA-S uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on) ... See More ⇒