All MOSFET. ELM16800EA Datasheet

 

ELM16800EA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM16800EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.96 nC
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 54.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-26

 ELM16800EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM16800EA Datasheet (PDF)

 ..1. Size:385K  elm
 elm16800ea.pdf

ELM16800EA ELM16800EA

Dual N-channel MOSFETELM16800EA-SGeneral description Features ELM16800EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=3.4A (Vgs=10V) Rds(on)

 9.1. Size:413K  elm
 elm16405ea.pdf

ELM16800EA ELM16800EA

Single P-channel MOSFETELM16405EA-SGeneral description Features ELM16405EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V)resistance. Rds(on)

 9.2. Size:438K  elm
 elm16408ea.pdf

ELM16800EA ELM16800EA

Single N-channel MOSFETELM16408EA-SGeneral description Features ELM16408EA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

 9.3. Size:579K  elm
 elm16601ea.pdf

ELM16800EA ELM16800EA

Complementary MOSFET ELM16601EA-SGeneral Description Features ELM16601EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on)

 9.4. Size:388K  elm
 elm16401ea.pdf

ELM16800EA ELM16800EA

Single P-channel MOSFETELM16401EA-SGeneral description Features ELM16401EA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)

 9.5. Size:389K  elm
 elm16402ea.pdf

ELM16800EA ELM16800EA

Single N-channel MOSFETELM16402EA-SGeneral description Features ELM16402EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=6.9A (Vgs=10V)resistance. Rds(on)

 9.6. Size:388K  elm
 elm16409ea.pdf

ELM16800EA ELM16800EA

Single P-channel MOSFETELM16409EA-SGeneral description Features ELM16409EA-S uses advanced trench technology Vds=-20Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

 9.7. Size:573K  elm
 elm16604ea.pdf

ELM16800EA ELM16800EA

Complementary MOSFET ELM16604EA-SGeneral Description Features ELM16604EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Id=3.4A(Vgs=4.5V) Id=-2.5A(Vgs=-4.5V) Rds(on)

 9.8. Size:386K  elm
 elm16403ea.pdf

ELM16800EA ELM16800EA

Single P-channel MOSFETELM16403EA-SGeneral description Features ELM16403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)

 9.9. Size:410K  elm
 elm16400ea.pdf

ELM16800EA ELM16800EA

Single N-channel MOSFETELM16400EA-SGeneral description Features ELM16400EA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=6.9A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSM3K01F

 

 
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