ELM16800EA - описание и поиск аналогов

 ..1. Size:385K  elm
 elm16800ea.pdf 

Dual N-channel MOSFET ELM16800EA-S General description Features ELM16800EA-S uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=3.4A (Vgs=10V) Rds(on)

 9.1. Size:413K  elm
 elm16405ea.pdf 

Single P-channel MOSFET ELM16405EA-S General description Features ELM16405EA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V) resistance. Rds(on)

 9.2. Size:438K  elm
 elm16408ea.pdf 

Single N-channel MOSFET ELM16408EA-S General description Features ELM16408EA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on)

 9.3. Size:579K  elm
 elm16601ea.pdf 

Complementary MOSFET ELM16601EA-S General Description Features ELM16601EA-S uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on)

 9.4. Size:388K  elm
 elm16401ea.pdf 

Single P-channel MOSFET ELM16401EA-S General description Features ELM16401EA-S uses advanced trench technology Vds=-30V to provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-10V) operation with gate voltages as low as 2.5V. Rds(on)

 9.5. Size:389K  elm
 elm16402ea.pdf 

Single N-channel MOSFET ELM16402EA-S General description Features ELM16402EA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=6.9A (Vgs=10V) resistance. Rds(on)

 9.6. Size:388K  elm
 elm16409ea.pdf 

Single P-channel MOSFET ELM16409EA-S General description Features ELM16409EA-S uses advanced trench technology Vds=-20V to provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-4.5V) operation with gate voltages as low as 1.8V and internal Rds(on)

 9.7. Size:573K  elm
 elm16604ea.pdf 

 9.8. Size:386K  elm
 elm16403ea.pdf 

Single P-channel MOSFET ELM16403EA-S General description Features ELM16403EA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V) resistance. Rds(on)

 9.9. Size:410K  elm
 elm16400ea.pdf 

Single N-channel MOSFET ELM16400EA-S General description Features ELM16400EA-S uses advanced trench technology Vds=30V to provide excellent Rds(on), low gate charge and Id=6.9A (Vgs=10V) operation with gate voltages as low as 2.5V. Rds(on)