ELM17600GA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM17600GA
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 VQgⓘ - Carga de la puerta: 1.57 nC
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 17 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SC-70-6
Búsqueda de reemplazo de MOSFET ELM17600GA
ELM17600GA Datasheet (PDF)
elm17600ga.pdf
Complementary MOSFET ELM17600GA-SGeneral Description Features ELM17600GA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Internal ESD Id=0.9A(Vgs=4.5V) Id=-0.6A(Vgs=-4.5V)protection is included. Rds(on)
elm17400fa.pdf
Single N-channel MOSFETELM17400FA-SGeneral description Features ELM17400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)
elm17401fa.pdf
Single P-channel MOSFETELM17401FA-SGeneral description Features ELM17401FA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)
elm17412ga.pdf
Single N-channel MOSFETELM17412GA-SGeneral description Features ELM17412GA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)
elm17408ga.pdf
Single N-channel MOSFETELM17408GA-SGeneral description Features ELM17408GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=2.2A (Vgs=4.5V)with gate voltages as low as 1.8V. Rds(on)
elm17800ga.pdf
Dual N-channel MOSFETELM17800GA-SGeneral description Features ELM17800GA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=0.9A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F