ELM17600GA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM17600GA
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 0.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.57
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 17
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
SC-70-6
ELM17600GA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM17600GA
Datasheet (PDF)
..1. Size:593K elm
elm17600ga.pdf 
Complementary MOSFET ELM17600GA-SGeneral Description Features ELM17600GA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Internal ESD Id=0.9A(Vgs=4.5V) Id=-0.6A(Vgs=-4.5V)protection is included. Rds(on)
9.1. Size:406K elm
elm17400fa.pdf
Single N-channel MOSFETELM17400FA-SGeneral description Features ELM17400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)
9.2. Size:386K elm
elm17401fa.pdf
Single P-channel MOSFETELM17401FA-SGeneral description Features ELM17401FA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)
9.3. Size:376K elm
elm17412ga.pdf
Single N-channel MOSFETELM17412GA-SGeneral description Features ELM17412GA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)
9.4. Size:410K elm
elm17408ga.pdf
Single N-channel MOSFETELM17408GA-SGeneral description Features ELM17408GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=2.2A (Vgs=4.5V)with gate voltages as low as 1.8V. Rds(on)
9.5. Size:411K elm
elm17800ga.pdf
Dual N-channel MOSFETELM17800GA-SGeneral description Features ELM17800GA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=0.9A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
