Справочник MOSFET. ELM17600GA

 

ELM17600GA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ELM17600GA
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1.57 nC
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 17 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: SC-70-6

 Аналог (замена) для ELM17600GA

 

 

ELM17600GA Datasheet (PDF)

 ..1. Size:593K  elm
 elm17600ga.pdf

ELM17600GA ELM17600GA

Complementary MOSFET ELM17600GA-SGeneral Description Features ELM17600GA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Internal ESD Id=0.9A(Vgs=4.5V) Id=-0.6A(Vgs=-4.5V)protection is included. Rds(on)

 9.1. Size:406K  elm
 elm17400fa.pdf

ELM17600GA ELM17600GA

Single N-channel MOSFETELM17400FA-SGeneral description Features ELM17400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)

 9.2. Size:386K  elm
 elm17401fa.pdf

ELM17600GA ELM17600GA

Single P-channel MOSFETELM17401FA-SGeneral description Features ELM17401FA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)

 9.3. Size:376K  elm
 elm17412ga.pdf

ELM17600GA ELM17600GA

Single N-channel MOSFETELM17412GA-SGeneral description Features ELM17412GA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)

 9.4. Size:410K  elm
 elm17408ga.pdf

ELM17600GA ELM17600GA

Single N-channel MOSFETELM17408GA-SGeneral description Features ELM17408GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=2.2A (Vgs=4.5V)with gate voltages as low as 1.8V. Rds(on)

 9.5. Size:411K  elm
 elm17800ga.pdf

ELM17600GA ELM17600GA

Dual N-channel MOSFETELM17800GA-SGeneral description Features ELM17800GA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=0.9A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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