ELM323506A Todos los transistores

 

ELM323506A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ELM323506A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 42 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 26 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 39 nC
   Tiempo de subida (tr): 90 nS
   Conductancia de drenaje-sustrato (Cd): 241 pF
   Resistencia entre drenaje y fuente RDS(on): 0.035 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET ELM323506A

 

ELM323506A Datasheet (PDF)

 ..1. Size:390K  elm
elm323506a.pdf

ELM323506A
ELM323506A

Single P-channel MOSFETELM323506A-SGeneral description Features ELM323506A-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-26A resistance. Rds(on)

 9.1. Size:595K  elm
elm32424la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32424LA-SGeneral description Features ELM32424LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)

 9.2. Size:604K  elm
elm32403la.pdf

ELM323506A
ELM323506A

Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 9.3. Size:430K  elm
elm32428la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32428LA-SGeneral description Features ELM32428LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)

 9.4. Size:452K  elm
elm32414la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)

 9.5. Size:648K  elm
elm32404la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

 9.6. Size:801K  elm
elm32409la-s.pdf

ELM323506A
ELM323506A

Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)

 9.7. Size:886K  elm
elm321504a.pdf

ELM323506A
ELM323506A

Single P-channel MOSFETELM321504A-SGeneral description Features ELM321504A-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-45A resistance. Rds(on)

 9.8. Size:600K  elm
elm32434la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32434LA-SGeneral description Features ELM32434LA-S uses advanced trench technology to Vds=600Vprovide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)

 9.9. Size:609K  elm
elm32408la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32408LA-SGeneral description Features ELM32408LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

 9.10. Size:592K  elm
elm32422la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32422LA-SGeneral description Features ELM32422LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)

 9.11. Size:787K  elm
elm32d548a.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32D548A-SGeneral description Features ELM32D548A-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=85A resistance. Rds(on)

 9.12. Size:716K  elm
elm322806a.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM322806A-SGeneral description Features ELM322806A-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=30A resistance. Rds(on)

 9.13. Size:547K  elm
elm32430la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32430LA-SGeneral description Features ELM32430LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)

 9.14. Size:658K  elm
elm32418la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

 9.15. Size:982K  elm
elm32401la-s.pdf

ELM323506A
ELM323506A

Single P-channel MOSFETELM32401LA-SGeneral description Features ELM32401LA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)

 9.16. Size:625K  elm
elm32402la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32402LA-SGeneral description Features ELM32402LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

 9.17. Size:625K  elm
elm32420la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32420LA-SGeneral description Features ELM32420LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)

 9.18. Size:891K  elm
elm321604a.pdf

ELM323506A
ELM323506A

Single P-channel MOSFETELM321604A-SGeneral description Features ELM321604A-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-43A resistance. Rds(on)

 9.19. Size:578K  elm
elm32405la.pdf

ELM323506A
ELM323506A

Single P-channel MOSFETELM32405LA-SGeneral description Features ELM32405LA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 9.20. Size:591K  elm
elm32416la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)

 9.21. Size:601K  elm
elm32407la.pdf

ELM323506A
ELM323506A

Single P-channel MOSFETELM32407LA-SGeneral description Features ELM32407LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)

 9.22. Size:602K  elm
elm32400la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32400LA-SGeneral description Features ELM32400LA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

 9.23. Size:473K  elm
elm32412la.pdf

ELM323506A
ELM323506A

Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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