ELM323506A. Аналоги и основные параметры
Наименование производителя: ELM323506A
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 241 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: TO-252
Аналог (замена) для ELM323506A
- подборⓘ MOSFET транзистора по параметрам
ELM323506A даташит
..1. Size:390K elm
elm323506a.pdf 

Single P-channel MOSFET ELM323506A-S General description Features ELM323506A-S uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-26A resistance. Rds(on)
9.1. Size:595K elm
elm32424la.pdf 

Single N-channel MOSFET ELM32424LA-S General description Features ELM32424LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)
9.2. Size:604K elm
elm32403la.pdf 

Single P-channel MOSFET ELM32403LA-S General description Features ELM32403LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
9.3. Size:430K elm
elm32428la.pdf 

Single N-channel MOSFET ELM32428LA-S General description Features ELM32428LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)
9.4. Size:452K elm
elm32414la.pdf 

Single N-channel MOSFET ELM32414LA-S General description Features ELM32414LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)
9.5. Size:648K elm
elm32404la.pdf 

Single N-channel MOSFET ELM32404LA-S General description Features ELM32404LA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
9.6. Size:801K elm
elm32409la-s.pdf 

Single P-channel MOSFET ELM32409LA-S General description Features ELM32409LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)
9.7. Size:886K elm
elm321504a.pdf 

Single P-channel MOSFET ELM321504A-S General description Features ELM321504A-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-45A resistance. Rds(on)
9.8. Size:600K elm
elm32434la.pdf 

Single N-channel MOSFET ELM32434LA-S General description Features ELM32434LA-S uses advanced trench technology to Vds=600V provide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)
9.9. Size:609K elm
elm32408la.pdf 

Single N-channel MOSFET ELM32408LA-S General description Features ELM32408LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
9.10. Size:592K elm
elm32422la.pdf 

Single N-channel MOSFET ELM32422LA-S General description Features ELM32422LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)
9.11. Size:787K elm
elm32d548a.pdf 

Single N-channel MOSFET ELM32D548A-S General description Features ELM32D548A-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=85A resistance. Rds(on)
9.12. Size:716K elm
elm322806a.pdf 

Single N-channel MOSFET ELM322806A-S General description Features ELM322806A-S uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=30A resistance. Rds(on)
9.13. Size:547K elm
elm32430la.pdf 

Single N-channel MOSFET ELM32430LA-S General description Features ELM32430LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
9.14. Size:658K elm
elm32418la.pdf 

Single N-channel MOSFET ELM32418LA-S General description Features ELM32418LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
9.15. Size:982K elm
elm32401la-s.pdf 

Single P-channel MOSFET ELM32401LA-S General description Features ELM32401LA-S uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)
9.16. Size:625K elm
elm32402la.pdf 

Single N-channel MOSFET ELM32402LA-S General description Features ELM32402LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
9.17. Size:625K elm
elm32420la.pdf 

Single N-channel MOSFET ELM32420LA-S General description Features ELM32420LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
9.18. Size:891K elm
elm321604a.pdf 

Single P-channel MOSFET ELM321604A-S General description Features ELM321604A-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-43A resistance. Rds(on)
9.19. Size:578K elm
elm32405la.pdf 

Single P-channel MOSFET ELM32405LA-S General description Features ELM32405LA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
9.20. Size:591K elm
elm32416la.pdf 

Single N-channel MOSFET ELM32416LA-S General description Features ELM32416LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)
9.21. Size:601K elm
elm32407la.pdf 

Single P-channel MOSFET ELM32407LA-S General description Features ELM32407LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)
9.22. Size:602K elm
elm32400la.pdf 

Single N-channel MOSFET ELM32400LA-S General description Features ELM32400LA-S uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
9.23. Size:473K elm
elm32412la.pdf 

Single N-channel MOSFET ELM32412LA-S General description Features ELM32412LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
Другие MOSFET... ELM18810BA
, ELM18814BA
, ELM18822BA
, ELM24603HA
, ELM24604HA
, ELM321504A
, ELM321604A
, ELM322806A
, IRFB3607
, ELM32400LA
, ELM32401LA-S
, ELM32402LA
, ELM32403LA
, ELM32404LA
, ELM32405LA
, ELM32407LA
, ELM32408LA
.
History: DG2N65-252
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