All MOSFET. ELM323506A Datasheet

 

ELM323506A Datasheet and Replacement


   Type Designator: ELM323506A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 241 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-252
 

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ELM323506A Datasheet (PDF)

 ..1. Size:390K  elm
elm323506a.pdf pdf_icon

ELM323506A

Single P-channel MOSFETELM323506A-SGeneral description Features ELM323506A-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-26A resistance. Rds(on)

 9.1. Size:595K  elm
elm32424la.pdf pdf_icon

ELM323506A

Single N-channel MOSFETELM32424LA-SGeneral description Features ELM32424LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)

 9.2. Size:604K  elm
elm32403la.pdf pdf_icon

ELM323506A

Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 9.3. Size:430K  elm
elm32428la.pdf pdf_icon

ELM323506A

Single N-channel MOSFETELM32428LA-SGeneral description Features ELM32428LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)

Datasheet: ELM18810BA , ELM18814BA , ELM18822BA , ELM24603HA , ELM24604HA , ELM321504A , ELM321604A , ELM322806A , AON7506 , ELM32400LA , ELM32401LA-S , ELM32402LA , ELM32403LA , ELM32404LA , ELM32405LA , ELM32407LA , ELM32408LA .

Keywords - ELM323506A MOSFET datasheet

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