RFP50N06LE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP50N06LE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 142 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 170 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO220AB

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RFP50N06LE datasheet

 ..1. Size:154K  intersil
 rfg50n06le rfp50n06le rf1s50n06lesm.pdf pdf_icon

RFP50N06LE

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs 50A, 60V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approa

 6.1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf pdf_icon

RFP50N06LE

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

 6.2. Size:74K  intersil
 rfp50n06.pdf pdf_icon

RFP50N06LE

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilizati

 6.3. Size:230K  inchange semiconductor
 rfp50n06.pdf pdf_icon

RFP50N06LE

isc N-Channel MOSFET Transistor RFP50N06 DESCRIPTION Drain Current I =50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as swithing Regulators,switc

MOSTRAR MÁS

Otros transistores... RFP40N10LE, RFP45N06, RFP45N06LE, RFP4N05L, RFP4N06L, RFP4N100, RFP50N05L, RFP50N06, 8N60, RFP60P03, RFP70N03, RFP70N06, RFP7N10LE, RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE