RFP50N06LE Specs and Replacement

Type Designator: RFP50N06LE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO220AB

RFP50N06LE substitution

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RFP50N06LE datasheet

 ..1. Size:154K  intersil
 rfg50n06le rfp50n06le rf1s50n06lesm.pdf pdf_icon

RFP50N06LE

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs 50A, 60V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approa... See More ⇒

 6.1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf pdf_icon

RFP50N06LE

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico... See More ⇒

 6.2. Size:74K  intersil
 rfp50n06.pdf pdf_icon

RFP50N06LE

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilizati... See More ⇒

 6.3. Size:230K  inchange semiconductor
 rfp50n06.pdf pdf_icon

RFP50N06LE

isc N-Channel MOSFET Transistor RFP50N06 DESCRIPTION Drain Current I =50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as swithing Regulators,switc... See More ⇒

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Detailed specifications: RFP40N10LE, RFP45N06, RFP45N06LE, RFP4N05L, RFP4N06L, RFP4N100, RFP50N05L, RFP50N06, 8N60, RFP60P03, RFP70N03, RFP70N06, RFP7N10LE, RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE

Keywords - RFP50N06LE MOSFET specs

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