RFP50N06LE - описание и поиск аналогов

 ..1. Size:154K  intersil
 rfg50n06le rfp50n06le rf1s50n06lesm.pdf 

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs 50A, 60V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approa

 6.1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf 

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

 6.2. Size:74K  intersil
 rfp50n06.pdf 

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilizati

 6.3. Size:230K  inchange semiconductor
 rfp50n06.pdf 

isc N-Channel MOSFET Transistor RFP50N06 DESCRIPTION Drain Current I =50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as swithing Regulators,switc