RFP8P10 Todos los transistores

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RFP8P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP8P10

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO220AB

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RFP8P10 Datasheet (PDF)

1.1. rfp8p10.pdf Size:354K _fairchild_semi

RFP8P10
RFP8P10

RFP8P10 Data Sheet January 2002 8A, 100V, 0.400 Ohm, P-Channel Power Features MOSFET • 8A, 100V This P-Channel enhancement mode silicon gate power field • rDS(ON) = 0.400Ω effect transistor is designed for applications such as • Related Literature switching regulators, switching convertors, motor drivers, - TB334 “Guidelines for Soldering Surface Mount relay drivers, an

5.1. rfd8p06e-sm rfp8p06e.pdf Size:134K _fairchild_semi

RFP8P10
RFP8P10

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs • 8A, 60V These are P-Channel power MOSFETs manufactured using • rDS(ON) = 0.300Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

5.2. rfd8p06le-sm rfp8p06le.pdf Size:106K _intersil

RFP8P10
RFP8P10

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Features Level, P-Channel Power MOSFET • 8A, 60V These products are P-Channel power MOSFETs • rDS(ON) = 0.300Ω manufactured using the MegaFET process. This process, • 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilizati

5.3. rfd8p05-sm rfp8p05.pdf Size:57K _intersil

RFP8P10
RFP8P10

RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs • 8A, 50V These products are P-Channel power MOSFETs • rDS(ON) = 0.300Ω manufactured using the MegaFET process. This process, • UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i

Otros transistores... RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , IRFP260M , RFT1P06E , RFT2P03L , RFT3055LE , RFW2N06RLE , RLP1N06CLE , SD10425JAA , SDF034JAA-D , SDF034JAA-S .

 


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Introduzca al menos 1 números o letras