RFP8P10 Datasheet. Specs and Replacement
Type Designator: RFP8P10 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 700 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220AB
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RFP8P10 substitution
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RFP8P10 datasheet
rfp8p10.pdf
RFP8P10 Data Sheet January 2002 8A, 100V, 0.400 Ohm, P-Channel Power Features MOSFET 8A, 100V This P-Channel enhancement mode silicon gate power field rDS(ON) = 0.400 effect transistor is designed for applications such as Related Literature switching regulators, switching convertors, motor drivers, - TB334 Guidelines for Soldering Surface Mount relay drivers, an... See More ⇒
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RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r... See More ⇒
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RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 50V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i... See More ⇒
Detailed specifications: RFP60P03, RFP70N03, RFP70N06, RFP7N10LE, RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE, AO4468, RFT1P06E, RFT2P03L, RFT3055LE, RFW2N06RLE, RLP1N06CLE, SD10425JAA, SDF034JAA-D, SDF034JAA-S
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