RFP8P10 - описание и поиск аналогов

 ..1. Size:354K  fairchild semi
 rfp8p10.pdf 

RFP8P10 Data Sheet January 2002 8A, 100V, 0.400 Ohm, P-Channel Power Features MOSFET 8A, 100V This P-Channel enhancement mode silicon gate power field rDS(ON) = 0.400 effect transistor is designed for applications such as Related Literature switching regulators, switching convertors, motor drivers, - TB334 Guidelines for Soldering Surface Mount relay drivers, an

 9.1. Size:134K  fairchild semi
 rfd8p06e-sm rfp8p06e.pdf 

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

 9.2. Size:279K  harris semi
 rfm8p08 rfm8p10 rfp8p08.pdf 

 9.3. Size:57K  intersil
 rfd8p05-sm rfp8p05.pdf 

RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 50V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i

 9.4. Size:106K  intersil
 rfd8p06le-sm rfp8p06le.pdf 

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Features Level, P-Channel Power MOSFET 8A, 60V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilizati