ELM33412CA Todos los transistores

 ..1. Size:423K  elm
 elm33412ca.pdf

Single N-channel MOSFET ELM33412CA-S General description Features ELM33412CA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)

 7.1. Size:398K  elm
 elm33414ca.pdf

Single N-channel MOSFET ELM33414CA-S General description Features ELM33414CA-S uses advanced trench technology Vds=60V to provide excellent Rds(on), low gate charge and Id=300mA operation with gate voltages as low as 3.5V and internal Rds(on)

 7.2. Size:1575K  elm
 elm33416ca.pdf

Single N-channel MOSFET ELM33416CA-S General description Features ELM33416CA-S uses advanced trench technology to Vds=100V provide excellent Rds(on), low gate charge and low gate Id=1.3A resistance. Rds(on)

 7.3. Size:485K  elm
 elm33410ca.pdf

Single N-channel MOSFET ELM33410CA-S General description Features ELM33410CA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=5A resistance. Rds(on)

 7.4. Size:610K  elm
 elm33411ca.pdf

Single P-channel MOSFET ELM33411CA-S General description Features ELM33411CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

 7.5. Size:355K  elm
 elm33415ca.pdf

Single P-channel MOSFET ELM33415CA-S General description Features ELM33415CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3.5A resistance. Rds(on)

 7.6. Size:486K  elm
 elm33413ca.pdf

Single P-channel MOSFET ELM33413CA-S General description Features ELM33413CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)