All MOSFET. ELM33412CA Datasheet

 

ELM33412CA Datasheet and Replacement


   Type Designator: ELM33412CA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.2 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOT-23
 

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ELM33412CA Datasheet (PDF)

 ..1. Size:423K  elm
 elm33412ca.pdf pdf_icon

ELM33412CA

Single N-channel MOSFETELM33412CA-SGeneral description Features ELM33412CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)

 7.1. Size:398K  elm
 elm33414ca.pdf pdf_icon

ELM33412CA

Single N-channel MOSFETELM33414CA-SGeneral description Features ELM33414CA-S uses advanced trench technology Vds=60Vto provide excellent Rds(on), low gate charge and Id=300mA operation with gate voltages as low as 3.5V and internal Rds(on)

 7.2. Size:1575K  elm
 elm33416ca.pdf pdf_icon

ELM33412CA

Single N-channel MOSFETELM33416CA-SGeneral description Features ELM33416CA-S uses advanced trench technology to Vds=100Vprovide excellent Rds(on), low gate charge and low gate Id=1.3A resistance. Rds(on)

 7.3. Size:485K  elm
 elm33410ca.pdf pdf_icon

ELM33412CA

Single N-channel MOSFETELM33410CA-SGeneral description Features ELM33410CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=5A resistance. Rds(on)

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History: AP2344GN | YJL3416A | AUIRF4905L

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