ELM33412CA - Даташиты. Аналоги. Основные параметры

Single N-channel MOSFETELM33412CA-SGeneral description Features ELM33412CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)

Single N-channel MOSFETELM33414CA-SGeneral description Features ELM33414CA-S uses advanced trench technology Vds=60Vto provide excellent Rds(on), low gate charge and Id=300mA operation with gate voltages as low as 3.5V and internal Rds(on)

Single N-channel MOSFETELM33416CA-SGeneral description Features ELM33416CA-S uses advanced trench technology to Vds=100Vprovide excellent Rds(on), low gate charge and low gate Id=1.3A resistance. Rds(on)

Single N-channel MOSFETELM33410CA-SGeneral description Features ELM33410CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=5A resistance. Rds(on)

Single P-channel MOSFETELM33411CA-SGeneral description Features ELM33411CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

Single P-channel MOSFETELM33415CA-SGeneral description Features ELM33415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3.5A resistance. Rds(on)

Single P-channel MOSFETELM33413CA-SGeneral description Features ELM33413CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)