ELM34421AA Todos los transistores

 ..1. Size:403K  elm
 elm34421aa.pdf

Single P-channel MOSFET ELM34421AA-N General description Features ELM34421AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A resistance. Rds(on)

 7.1. Size:414K  elm
 elm34423aa.pdf

Single P-channel MOSFET ELM34423AA-N General description Features ELM34423AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Internal ESD protection is included. Rds(on)

 8.1. Size:654K  elm
 elm34402aa.pdf

Single N-channel MOSFET ELM34402AA-N General description Features ELM34402AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

 8.2. Size:605K  elm
 elm34404aa.pdf

Single N-channel MOSFET ELM34404AA-N General description Features ELM34404AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)

 8.3. Size:991K  elm
 elm34413aa-n.pdf

Single P-channel MOSFET ELM34413AA-N General description Features ELM34413AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 8.4. Size:613K  elm
 elm34411aa.pdf

Single P-channel MOSFET ELM34411AA-N General description Features ELM34411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 8.5. Size:504K  elm
 elm34400aa.pdf

Single N-channel MOSFET ELM34400AA-N General description Features ELM34400AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

 8.6. Size:561K  elm
 elm34417aa.pdf

Single P-channel MOSFET ELM34417AA-N General description Features ELM34417AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)

 8.7. Size:356K  elm
 elm34414aa.pdf

Single N-channel MOSFET ELM34414AA-N General description Features ELM34414AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)

 8.8. Size:614K  elm
 elm34415aa.pdf

Single P-channel MOSFET ELM34415AA-N General description Features ELM34415AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-13A resistance. Rds(on)

 8.9. Size:439K  elm
 elm34418aa.pdf

Single N-channel MOSFET ELM34418AA-N General description Features ELM34418AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=22A resistance. Rds(on)

 8.10. Size:986K  elm
 elm34403aa-n.pdf

Single P-channel MOSFET ELM34403AA-N General description Features ELM34403AA-N uses advanced trench technology to Vds=-55V provide excellent Rds(on), low gate charge and low gate Id=-4.5A resistance. Rds(on)

 8.11. Size:249K  elm
 elm34409aa.pdf

Single P-channel MOSFET ELM34409AA-N General description Features ELM34409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)

 8.12. Size:423K  elm
 elm34401aa.pdf

Single P-channel MOSFET ELM34401AA-N General description Features ELM34401AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 8.13. Size:612K  elm
 elm34405aa.pdf

Single P-channel MOSFET ELM34405AA-N General description Features ELM34405AA-N uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-5.5A resistance. Rds(on)

 8.14. Size:420K  elm
 elm34408aa.pdf

Single N-channel MOSFET ELM34408AA-N General description Features ELM34408AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

 8.15. Size:625K  elm
 elm34407aa.pdf

Single P-channel MOSFET ELM34407AA-N General description Features ELM34407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 8.16. Size:322K  elm
 elm34416aa.pdf

Single N-channel MOSFET ELM34416AA-N General description Features ELM34416AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11A resistance. Rds(on)

 8.17. Size:981K  elm
 elm34406aa-n.pdf

Single N-channel MOSFET ELM34406AA-N General description Features ELM34406AA-N uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=7.5A resistance. Rds(on)