All MOSFET. ELM34421AA Datasheet

 

ELM34421AA MOSFET. Datasheet pdf. Equivalent

Type Designator: ELM34421AA

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 120 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 1070 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: SOP-8

ELM34421AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM34421AA Datasheet (PDF)

0.1. elm34421aa.pdf Size:403K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34421AA-N ■General description ■Features ELM34421AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-15A resistance. • Rds(on) < 7.5mΩ (Vgs=-10V) • Rds(on) < 12mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V Gate-source volt

7.1. elm34423aa.pdf Size:414K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34423AA-N ■General description ■Features ELM34423AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-8A resistance. Internal ESD protection is included. • Rds(on) < 20Ω (Vgs=-10V) • Rds(on) < 35Ω (Vgs=-4.5V) • ESD protected ■Maximum absolute ratings Parameter Symbol Limit Unit No

 8.1. elm34406aa-n.pdf Size:981K _elm

ELM34421AA
ELM34421AA

Single N-channel MOSFET ELM34406AA-N ■General description ■Features ELM34406AA-N uses advanced trench technology to • Vds=40V provide excellent Rds(on), low gate charge and low gate • Id=7.5A resistance. • Rds(on) < 28mΩ (Vgs=10V) • Rds(on) < 42mΩ (Vgs=4.5V) ■Maximum absolute ratings Ta=25°C. Unless otherwise noted. Parameter Symbol Limit Unit Note Drain-source volt

8.2. elm34409aa.pdf Size:249K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34409AA-N ■General description ■Features ELM34409AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-9A resistance. • Rds(on) < 20mΩ (Vgs=-10V) • Rds(on) < 35mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate-source vo

 8.3. elm34411aa.pdf Size:613K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34411AA-N ■General description ■Features ELM34411AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-12A resistance. • Rds(on) < 14mΩ (Vgs=-10V) • Rds(on) < 22mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate-source v

8.4. elm34402aa.pdf Size:654K _elm

ELM34421AA
ELM34421AA

Single N-channel MOSFET ELM34402AA-N ■General description ■Features ELM34402AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=8A resistance. • Rds(on) < 20mΩ (Vgs=10V) • Rds(on) < 32mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V ± Gate-source voltage

 8.5. elm34413aa-n.pdf Size:991K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34413AA-N ■General description ■Features ELM34413AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-12A resistance. • Rds(on) < 12mΩ (Vgs=-10V) • Rds(on) < 19mΩ (Vgs=-4.5V) ■Maximum absolute ratings Ta=25°C. Unless otherwise noted. Parameter Symbol Limit Unit Note Drain-source v

8.6. elm34400aa.pdf Size:504K _elm

ELM34421AA
ELM34421AA

Single N-channel MOSFET ELM34400AA-N ■General description ■Features ELM34400AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=10A resistance. • Rds(on) < 12.5mΩ (Vgs=10V) • Rds(on) < 20mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V ± Gate-source volt

8.7. elm34417aa.pdf Size:561K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34417AA-N ■General description ■Features ELM34417AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-6A resistance. • Rds(on) < 45mΩ (Vgs=-10V) • Rds(on) < 75mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate-source vo

8.8. elm34407aa.pdf Size:625K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34407AA-N ■General description ■Features ELM34407AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-8A resistance. • Rds(on) < 32mΩ (Vgs=-10V) • Rds(on) < 55mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate-source vo

8.9. elm34418aa.pdf Size:439K _elm

ELM34421AA
ELM34421AA

Single N-channel MOSFET ELM34418AA-N ■General description ■Features ELM34418AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=22A resistance. • Rds(on) < 4.0mΩ (Vgs=10V) • Rds(on) < 5.0mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V ± Gate-source volt

8.10. elm34403aa-n.pdf Size:986K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34403AA-N ■General description ■Features ELM34403AA-N uses advanced trench technology to • Vds=-55V provide excellent Rds(on), low gate charge and low gate • Id=-4.5A resistance. • Rds(on) < 80mΩ (Vgs=-10V) • Rds(on) < 150mΩ (Vgs=-4.5V) ■Maximum absolute ratings Ta=25°C. Unless otherwise noted. Parameter Symbol Limit Unit Note Drain-source

8.11. elm34404aa.pdf Size:605K _elm

ELM34421AA
ELM34421AA

Single N-channel MOSFET ELM34404AA-N ■General description ■Features ELM34404AA-N uses advanced trench technology to • Vds=60V provide excellent Rds(on), low gate charge and low gate • Id=5.5A resistance. • Rds(on) < 55mΩ (Vgs=10V) • Rds(on) < 75mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 60 V ± Gate-source volta

8.12. elm34408aa.pdf Size:420K _elm

ELM34421AA
ELM34421AA

Single N-channel MOSFET ELM34408AA-N ■General description ■Features ELM34408AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=8A resistance. • Rds(on) < 18mΩ (Vgs=10V) • Rds(on) < 30mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V ± Gate-source voltage

8.13. elm34414aa.pdf Size:356K _elm

ELM34421AA
ELM34421AA

Single N-channel MOSFET ELM34414AA-N ■General description ■Features ELM34414AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=15A resistance. • Rds(on) < 8mΩ (Vgs=10V) • Rds(on) < 12mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V ± Gate-source voltage

8.14. elm34416aa.pdf Size:322K _elm

ELM34421AA
ELM34421AA

Single N-channel MOSFET ELM34416AA-N ■General description ■Features ELM34416AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=11A resistance. • Rds(on) < 12.0mΩ (Vgs=10V) • Rds(on) < 17.5mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V ± Gate-source vo

8.15. elm34405aa.pdf Size:612K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34405AA-N ■General description ■Features ELM34405AA-N uses advanced trench technology to • Vds=-40V provide excellent Rds(on), low gate charge and low gate • Id=-5.5A resistance. • Rds(on) < 55mΩ (Vgs=-10V) • Rds(on) < 94mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -40 V ± Gate-source

8.16. elm34415aa.pdf Size:614K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34415AA-N ■General description ■Features ELM34415AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-13A resistance. • Rds(on) < 10.5mΩ (Vgs=-10V) • Rds(on) < 16mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate-source

8.17. elm34401aa.pdf Size:423K _elm

ELM34421AA
ELM34421AA

Single P-channel MOSFET ELM34401AA-N ■General description ■Features ELM34401AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-8A resistance. • Rds(on) < 35mΩ (Vgs=-10V) • Rds(on) < 60mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate-source vo

Datasheet: ELM34409AA , ELM34411AA , ELM34413AA-N , ELM34414AA , ELM34415AA , ELM34416AA , ELM34417AA , ELM34418AA , BUZ10 , ELM34423AA , ELM34600AA , ELM34601AA , ELM34603AA , ELM34604AA , ELM34605AA-N , ELM34608AA , ELM34801AA .

 

 
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