ELM34421AA
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ELM34421AA
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 15
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 120
nC
trⓘ -
Время нарастания: 16
ns
Cossⓘ - Выходная емкость: 1070
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075
Ohm
Тип корпуса:
SOP-8
- подбор MOSFET транзистора по параметрам
ELM34421AA
Datasheet (PDF)
..1. Size:403K elm
elm34421aa.pdf 

Single P-channel MOSFETELM34421AA-NGeneral description Features ELM34421AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A resistance. Rds(on)
7.1. Size:414K elm
elm34423aa.pdf 

Single P-channel MOSFETELM34423AA-NGeneral description Features ELM34423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8Aresistance. Internal ESD protection is included. Rds(on)
8.1. Size:654K elm
elm34402aa.pdf 

Single N-channel MOSFETELM34402AA-NGeneral description Features ELM34402AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)
8.2. Size:605K elm
elm34404aa.pdf 

Single N-channel MOSFETELM34404AA-NGeneral description Features ELM34404AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)
8.3. Size:991K elm
elm34413aa-n.pdf 

Single P-channel MOSFETELM34413AA-NGeneral description Features ELM34413AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
8.4. Size:613K elm
elm34411aa.pdf 

Single P-channel MOSFETELM34411AA-NGeneral description Features ELM34411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
8.5. Size:504K elm
elm34400aa.pdf 

Single N-channel MOSFETELM34400AA-NGeneral description Features ELM34400AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
8.6. Size:561K elm
elm34417aa.pdf 

Single P-channel MOSFETELM34417AA-NGeneral description Features ELM34417AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)
8.7. Size:356K elm
elm34414aa.pdf 

Single N-channel MOSFETELM34414AA-NGeneral description Features ELM34414AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)
8.8. Size:614K elm
elm34415aa.pdf 

Single P-channel MOSFETELM34415AA-NGeneral description Features ELM34415AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-13A resistance. Rds(on)
8.9. Size:439K elm
elm34418aa.pdf 

Single N-channel MOSFETELM34418AA-NGeneral description Features ELM34418AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=22A resistance. Rds(on)
8.10. Size:986K elm
elm34403aa-n.pdf 

Single P-channel MOSFETELM34403AA-NGeneral description Features ELM34403AA-N uses advanced trench technology to Vds=-55Vprovide excellent Rds(on), low gate charge and low gate Id=-4.5A resistance. Rds(on)
8.11. Size:249K elm
elm34409aa.pdf 

Single P-channel MOSFETELM34409AA-NGeneral description Features ELM34409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)
8.12. Size:423K elm
elm34401aa.pdf 

Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
8.13. Size:612K elm
elm34405aa.pdf 

Single P-channel MOSFETELM34405AA-NGeneral description Features ELM34405AA-N uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-5.5A resistance. Rds(on)
8.14. Size:420K elm
elm34408aa.pdf 

Single N-channel MOSFETELM34408AA-NGeneral description Features ELM34408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)
8.15. Size:625K elm
elm34407aa.pdf 

Single P-channel MOSFETELM34407AA-NGeneral description Features ELM34407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
8.16. Size:322K elm
elm34416aa.pdf 

Single N-channel MOSFETELM34416AA-NGeneral description Features ELM34416AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11A resistance. Rds(on)
8.17. Size:981K elm
elm34406aa-n.pdf 

Single N-channel MOSFETELM34406AA-NGeneral description Features ELM34406AA-N uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=7.5A resistance. Rds(on)
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History: IRFB4410Z