ELM34812AA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM34812AA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 277 pF
Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET ELM34812AA
ELM34812AA Datasheet (PDF)
elm34812aa.pdf
Dual N-channel MOSFETELM34812AA-NGeneral description Features ELM34812AA-N uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)
elm34810aa.pdf
Dual N-channel MOSFETELM34810AA-NGeneral description Features ELM34810AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)
elm34803aa-n.pdf
Dual P-channel MOSFETELM34803AA-NGeneral description Features ELM34803AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
elm34802aa-n.pdf
Dual N-channel MOSFETELM34802AA-NGeneral description Features ELM34802AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)
elm34801aa.pdf
Dual P-channel MOSFETELM34801AA-NGeneral description Features ELM34801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)
elm34804aa.pdf
Dual N-channel MOSFETELM34804AA-NGeneral description Features ELM34804AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)
elm34808aa.pdf
Dual N-channel MOSFETELM34808AA-NGeneral description Features ELM34808AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
