ELM34812AA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM34812AA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 277
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
SOP-8
ELM34812AA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM34812AA
Datasheet (PDF)
..1. Size:429K elm
elm34812aa.pdf 
Dual N-channel MOSFETELM34812AA-NGeneral description Features ELM34812AA-N uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)
7.1. Size:545K elm
elm34810aa.pdf
Dual N-channel MOSFETELM34810AA-NGeneral description Features ELM34810AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)
8.1. Size:1071K elm
elm34803aa-n.pdf
Dual P-channel MOSFETELM34803AA-NGeneral description Features ELM34803AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
8.2. Size:775K elm
elm34802aa-n.pdf
Dual N-channel MOSFETELM34802AA-NGeneral description Features ELM34802AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)
8.3. Size:416K elm
elm34801aa.pdf
Dual P-channel MOSFETELM34801AA-NGeneral description Features ELM34801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)
8.4. Size:605K elm
elm34804aa.pdf
Dual N-channel MOSFETELM34804AA-NGeneral description Features ELM34804AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)
8.5. Size:559K elm
elm34808aa.pdf
Dual N-channel MOSFETELM34808AA-NGeneral description Features ELM34808AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)
Datasheet: WPB4002
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