FA38SA50LCP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FA38SA50LCP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 280 nC
   trⓘ - Tiempo de subida: 340 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT-227

Búsqueda de reemplazo de MOSFET FA38SA50LCP

FA38SA50LCP Datasheet (PDF)

..1. Size:170K vishay
fa38sa50lcp.pdf

FA38SA50LCPwww.vishay.comVishay SemiconductorsPower MOSFET, 38 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirementsSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for industrial level Material

4.1. Size:171K international rectifier
fa38sa50lc.pdf

PD - 91615BFA38SA50LCHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.13 Fully Avalanche RatedG Simple Drive RequirementsID = 38A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with

6.1. Size:120K international rectifier
fa38sa50.pdf

PD 9.1615FA38SA50PRELIMINARYHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.13 Fully Avalanche RatedG Simple Drive RequirementsID = 38A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifierprovide the desi

6.2. Size:194K vishay
fa38sa50.pdf

FA38SA50LCPVishay SemiconductorsPower MOSFET, 38 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche ratedSOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC Designed for industrial level

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF3704Z

Liste

Recientemente añadidas las descripciónes de los transistores: