FA38SA50LCP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FA38SA50LCP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 500 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 38 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 280 nC
Tiempo de subida (tr): 340 nS
Conductancia de drenaje-sustrato (Cd): 1600 pF
Resistencia entre drenaje y fuente RDS(on): 0.13 Ohm
Paquete / Cubierta: SOT-227
Búsqueda de reemplazo de MOSFET FA38SA50LCP
FA38SA50LCP Datasheet (PDF)
fa38sa50lcp.pdf
FA38SA50LCPwww.vishay.comVishay SemiconductorsPower MOSFET, 38 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirementsSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for industrial level Material
fa38sa50lc.pdf
PD - 91615BFA38SA50LCHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.13 Fully Avalanche RatedG Simple Drive RequirementsID = 38A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with
fa38sa50.pdf
PD 9.1615FA38SA50PRELIMINARYHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.13 Fully Avalanche RatedG Simple Drive RequirementsID = 38A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifierprovide the desi
fa38sa50.pdf
FA38SA50LCPVishay SemiconductorsPower MOSFET, 38 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche ratedSOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC Designed for industrial level
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C