FA38SA50LCP Todos los transistores

 

FA38SA50LCP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FA38SA50LCP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 340 nS

Cossⓘ - Capacitancia de salida: 1600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: SOT-227

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FA38SA50LCP datasheet

 ..1. Size:170K  vishay
fa38sa50lcp.pdf pdf_icon

FA38SA50LCP

FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for industrial level Material

 4.1. Size:171K  international rectifier
fa38sa50lc.pdf pdf_icon

FA38SA50LCP

PD - 91615B FA38SA50LC HEXFET Power MOSFET Fully Isolated Package D Easy to Use and Parallel VDSS = 500V Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.13 Fully Avalanche Rated G Simple Drive Requirements ID = 38A Low Drain to Case Capacitance S Low Internal Inductance Description Third Generation HEXFETs from International Rectifier provide the designer with

 6.1. Size:120K  international rectifier
fa38sa50.pdf pdf_icon

FA38SA50LCP

PD 9.1615 FA38SA50 PRELIMINARY HEXFET Power MOSFET Fully Isolated Package D Easy to Use and Parallel VDSS = 500V Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.13 Fully Avalanche Rated G Simple Drive Requirements ID = 38A Low Drain to Case Capacitance S Low Internal Inductance Description Third Generation HEXFETs from International Rectifier provide the desi

 6.2. Size:194K  vishay
fa38sa50.pdf pdf_icon

FA38SA50LCP

FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated SOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC Designed for industrial level

Otros transistores... F5S90HVX2 , F5V50 , F5V90HVX2 , F60W60CP , F6B52HP , F6F70HVX2 , F7F60C3M , F7W90HVX2 , EMB04N03H , FA57SA50LCP , FC40SA50FKP , FC4A22050L , FC4B21080L , FC4B21300L , FC4B21320L , FC4B22070L , FC4B22180L .

History: AT10N65S

 

 

 

 

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