All MOSFET. FA38SA50LCP Datasheet

 

FA38SA50LCP MOSFET. Datasheet pdf. Equivalent


   Type Designator: FA38SA50LCP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 280 nC
   trⓘ - Rise Time: 340 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT-227

 FA38SA50LCP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FA38SA50LCP Datasheet (PDF)

 ..1. Size:170K  vishay
 fa38sa50lcp.pdf

FA38SA50LCP FA38SA50LCP

FA38SA50LCPwww.vishay.comVishay SemiconductorsPower MOSFET, 38 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirementsSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for industrial level Material

 4.1. Size:171K  international rectifier
 fa38sa50lc.pdf

FA38SA50LCP FA38SA50LCP

PD - 91615BFA38SA50LCHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.13 Fully Avalanche RatedG Simple Drive RequirementsID = 38A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with

 6.1. Size:120K  international rectifier
 fa38sa50.pdf

FA38SA50LCP FA38SA50LCP

PD 9.1615FA38SA50PRELIMINARYHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.13 Fully Avalanche RatedG Simple Drive RequirementsID = 38A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifierprovide the desi

 6.2. Size:194K  vishay
 fa38sa50.pdf

FA38SA50LCP FA38SA50LCP

FA38SA50LCPVishay SemiconductorsPower MOSFET, 38 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche ratedSOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC Designed for industrial level

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: STV60N06

 

 
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