FC6B21100L Todos los transistores

 

FC6B21100L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FC6B21100L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5300 nS
   Cossⓘ - Capacitancia de salida: 720 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: MLGA006

 Búsqueda de reemplazo de MOSFET FC6B21100L

 

FC6B21100L Datasheet (PDF)

 ..1. Size:395K  panasonic
fc6b21100l.pdf

FC6B21100L
FC6B21100L

Doc No. TT4-EA-14512Revision. 2Product StandardsMOS FETFC6B21100LFC6B21100LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.676 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.5 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co

 7.1. Size:3133K  panasonic
fc6b21150l.pdf

FC6B21100L
FC6B21100L

Doc No. TT4-EA-14950Revision. 1Product StandardsMOS FETFC6B21150LFC6B21150LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.146 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.0 mVGS = 4.5 V)1 2 3 CSPChip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.3 Marki

 9.1. Size:334K  panasonic
fc6b22100l.pdf

FC6B21100L
FC6B21100L

Doc No. TT4-EA-14734Revision. 2Product StandardsMOS FETFC6B22100LFC6B22100LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.2 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co

 9.2. Size:330K  panasonic
fc6b22220l.pdf

FC6B21100L
FC6B21100L

Doc No. TT4-EA-14847Revision. 1Product StandardsMOS FETFC6B22220LFC6B22220LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.2 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 compliant)

 9.3. Size:391K  panasonic
fc6b22090l.pdf

FC6B21100L
FC6B21100L

Doc No. TT4-EA-14513Revision. 1Product StandardsMOS FETFC6B22090LFC6B22090LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.5 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co

 9.4. Size:3200K  panasonic
fc6b22160l.pdf

FC6B21100L
FC6B21100L

Doc No. TT4-EA-14964Revision. 1Product StandardsMOS FETFC6B22160LFC6B22160LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.656 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.7 mVGS = 4.5 V)1 2 3 CSP(Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RJ1G12BGN

 

 
Back to Top

 


History: RJ1G12BGN

FC6B21100L
  FC6B21100L
  FC6B21100L
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top