FC6B21100L MOSFET. Datasheet pdf. Equivalent
Type Designator: FC6B21100L
Marking Code: 33
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 5300 nS
Cossⓘ - Output Capacitance: 720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: MLGA006
FC6B21100L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FC6B21100L Datasheet (PDF)
fc6b21100l.pdf
Doc No. TT4-EA-14512Revision. 2Product StandardsMOS FETFC6B21100LFC6B21100LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.676 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.5 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co
fc6b21150l.pdf
Doc No. TT4-EA-14950Revision. 1Product StandardsMOS FETFC6B21150LFC6B21150LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.146 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.0 mVGS = 4.5 V)1 2 3 CSPChip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.3 Marki
fc6b22100l.pdf
Doc No. TT4-EA-14734Revision. 2Product StandardsMOS FETFC6B22100LFC6B22100LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.2 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co
fc6b22220l.pdf
Doc No. TT4-EA-14847Revision. 1Product StandardsMOS FETFC6B22220LFC6B22220LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.2 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 compliant)
fc6b22090l.pdf
Doc No. TT4-EA-14513Revision. 1Product StandardsMOS FETFC6B22090LFC6B22090LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.5 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co
fc6b22160l.pdf
Doc No. TT4-EA-14964Revision. 1Product StandardsMOS FETFC6B22160LFC6B22160LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.656 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.7 mVGS = 4.5 V)1 2 3 CSP(Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSGG08R060W3 | AP9561GP-HF | MSF9N90 | SL2300 | MCB160N10Y
History: LSGG08R060W3 | AP9561GP-HF | MSF9N90 | SL2300 | MCB160N10Y
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918