FIR18N20G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FIR18N20G Datasheet (PDF)

..1. Size:1726K first silicon
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FIR18N20GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON)

8.1. Size:4194K first semi
fir18n50fg.pdf pdf_icon

FIR18N50FGN - CHANNEL MOSFET-G PIN Connection TO-220FVDSS 500 V ID 18 A PD(TC=25) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FGVDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b

8.2. Size:2574K first semi
fir18n65fg.pdf pdf_icon

FIR18N65FG650V N-Channel MOSFET-D . PIN Connection TO-220FFeatures 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC)G D S Low Crss ( typical 6.2pF) Fast switchingSchematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking DiagramY = YearA = Assembly LocationYAWWVTWW = Work WeekFIR18N65FVT =

Otros transistores... FC8V22290L , FC8V22300L , FC8V3303 , FC8V36060L , FC8V36120L , FG654301 , FG694301 , FG6K4206 , 2N7000 , FIR210N06G , FIR75N06G , FIR75N075G , FJ330301 , FJ3303010L , FJ350301 , FJ4B0110 , FJ4B0111 .