FIR18N20G - аналоги, параметры транзистора - Справочник транзисторов

FIR18N20G даташит

..1. Size:1726K first silicon
fir18n20g.pdf pdf_icon

FIR18N20G N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220 Description The FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON)

8.1. Size:4194K first semi
fir18n50fg.pdf pdf_icon

FIR18N50FG N - CHANNEL MOSFET-G PIN Connection TO-220F VDSS 500 V ID 18 A PD(TC=25 ) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FG VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b

8.2. Size:2574K first semi
fir18n65fg.pdf pdf_icon

FIR18N65FG 650V N-Channel MOSFET-D . PIN Connection TO-220F Features 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC) G D S Low Crss ( typical 6.2pF) Fast switching Schematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking Diagram Y = Year A = Assembly Location YAWWVT WW = Work Week FIR18N65F VT =

Другие MOSFET... FC8V22290L , FC8V22300L , FC8V3303 , FC8V36060L , FC8V36120L , FG654301 , FG694301 , FG6K4206 , AON7408 , FIR210N06G , FIR75N06G , FIR75N075G , FJ330301 , FJ3303010L , FJ350301 , FJ4B0110 , FJ4B0111 .