FIR18N20GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON)

FIR18N50FGN - CHANNEL MOSFET-G PIN Connection TO-220FVDSS 500 V ID 18 A PD(TC=25) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FGVDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b

FIR18N65FG650V N-Channel MOSFET-D . PIN Connection TO-220FFeatures 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC)G D S Low Crss ( typical 6.2pF) Fast switchingSchematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking DiagramY = YearA = Assembly LocationYAWWVTWW = Work WeekFIR18N65FVT =