FIR18N20G Specs and Replacement
Type Designator: FIR18N20G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 163 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-220
FIR18N20G substitution
- MOSFET ⓘ Cross-Reference Search
FIR18N20G datasheet
fir18n20g.pdf
FIR18N20G N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220 Description The FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON) ... See More ⇒
fir18n50fg.pdf
FIR18N50FG N - CHANNEL MOSFET-G PIN Connection TO-220F VDSS 500 V ID 18 A PD(TC=25 ) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FG VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b... See More ⇒
fir18n65fg.pdf
FIR18N65FG 650V N-Channel MOSFET-D . PIN Connection TO-220F Features 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC) G D S Low Crss ( typical 6.2pF) Fast switching Schematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking Diagram Y = Year A = Assembly Location YAWWVT WW = Work Week FIR18N65F VT = ... See More ⇒
Detailed specifications: FC8V22290L, FC8V22300L, FC8V3303, FC8V36060L, FC8V36120L, FG654301, FG694301, FG6K4206, AON7408, FIR210N06G, FIR75N06G, FIR75N075G, FJ330301, FJ3303010L, FJ350301, FJ4B0110, FJ4B0111
Keywords - FIR18N20G MOSFET specs
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