FJ4B0112 Todos los transistores

 

FJ4B0112 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJ4B0112

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 201 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.051 Ohm

Encapsulados: ULGA004

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FJ4B0112 datasheet

 ..1. Size:2749K  panasonic
 fj4b0112.pdf pdf_icon

FJ4B0112

Doc No. TT4-EA-14960 Revision. 1 Product Standards MOS FET FJ4B01120L FJ4B01120L Single P-channel MOS FET Unit mm For Load switching circuits 1.0 4 3 TOP Features Low Drain-source ON resistance Rds(on) typ. = 40 m VGS = -2.5 V) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.25 Marking Symbol 1F BOTTOM Packaging

 7.1. Size:2759K  panasonic
 fj4b0110.pdf pdf_icon

FJ4B0112

Doc No. TT4-EA-14958 Revision. 1 Product Standards MOS FET FJ4B01100L FJ4B01100L Single P-channel MOS FET Unit mm For Load switching circuits 0.80 4 3 TOP Features Low Drain-source ON resistance Rds(on) typ. = 68 m (VGS = -2.5 V) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.20 Marking Symbol 1D BOTTOM Packaging

 7.2. Size:2778K  panasonic
 fj4b0111.pdf pdf_icon

FJ4B0112

Doc No. TT4-EA-14953 Revision. 1 Product Standards MOS FET FJ4B01110L FJ4B01110L Single P-channel MOS FET Unit mm For Load switching circuits 0.60 4 3 TOP Features Drain-source ON resistance Rds(on) typ. = 141 m ( VGS = -2.5 V ) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.15 Marking Symbol 1E BOTTOM Packaging

 8.1. Size:714K  panasonic
 fj4b0124.pdf pdf_icon

FJ4B0112

Doc No. TT4-EA-15007 Revision. 1 Product Standards MOS FET FJ4B01240L FJ4B01240L Single P-channel MOS FET Unit mm For Load switching / Battery Management circuits TOP Features Low Drain-source ON resistance Rds(on) typ. = 21 m VGS = -3.2 V) CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) Marking Symbol 1J BOTTOM Packaging

MOSTRAR MÁS

Otros transistores... FIR210N06G , FIR75N06G , FIR75N075G , FJ330301 , FJ3303010L , FJ350301 , FJ4B0110 , FJ4B0111 , IRFP260 , FJ4B0124 , FJ6K0101 , FJ6K01010L , FK330301 , FK3303010L , FK330307 , FK330308 , FK330309 .

 

 

 

 

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