FJ4B0112 PDF and Equivalents Search

 

FJ4B0112 Specs and Replacement

Type Designator: FJ4B0112

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 201 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm

Package: ULGA004

FJ4B0112 substitution

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FJ4B0112 datasheet

 ..1. Size:2749K  panasonic
 fj4b0112.pdf pdf_icon

FJ4B0112

Doc No. TT4-EA-14960 Revision. 1 Product Standards MOS FET FJ4B01120L FJ4B01120L Single P-channel MOS FET Unit mm For Load switching circuits 1.0 4 3 TOP Features Low Drain-source ON resistance Rds(on) typ. = 40 m VGS = -2.5 V) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.25 Marking Symbol 1F BOTTOM Packaging ... See More ⇒

 7.1. Size:2759K  panasonic
 fj4b0110.pdf pdf_icon

FJ4B0112

Doc No. TT4-EA-14958 Revision. 1 Product Standards MOS FET FJ4B01100L FJ4B01100L Single P-channel MOS FET Unit mm For Load switching circuits 0.80 4 3 TOP Features Low Drain-source ON resistance Rds(on) typ. = 68 m (VGS = -2.5 V) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.20 Marking Symbol 1D BOTTOM Packaging... See More ⇒

 7.2. Size:2778K  panasonic
 fj4b0111.pdf pdf_icon

FJ4B0112

Doc No. TT4-EA-14953 Revision. 1 Product Standards MOS FET FJ4B01110L FJ4B01110L Single P-channel MOS FET Unit mm For Load switching circuits 0.60 4 3 TOP Features Drain-source ON resistance Rds(on) typ. = 141 m ( VGS = -2.5 V ) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.15 Marking Symbol 1E BOTTOM Packaging... See More ⇒

 8.1. Size:714K  panasonic
 fj4b0124.pdf pdf_icon

FJ4B0112

Doc No. TT4-EA-15007 Revision. 1 Product Standards MOS FET FJ4B01240L FJ4B01240L Single P-channel MOS FET Unit mm For Load switching / Battery Management circuits TOP Features Low Drain-source ON resistance Rds(on) typ. = 21 m VGS = -3.2 V) CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) Marking Symbol 1J BOTTOM Packaging ... See More ⇒

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Detailed specifications: FIR210N06G, FIR75N06G, FIR75N075G, FJ330301, FJ3303010L, FJ350301, FJ4B0110, FJ4B0111, IRFP260, FJ4B0124, FJ6K0101, FJ6K01010L, FK330301, FK3303010L, FK330307, FK330308, FK330309

Keywords - FJ4B0112 MOSFET specs

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