All MOSFET. FJ4B0112 Datasheet

 

FJ4B0112 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FJ4B0112
   Marking Code: 1F
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.7 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: ULGA004

 FJ4B0112 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FJ4B0112 Datasheet (PDF)

 ..1. Size:2749K  panasonic
 fj4b0112.pdf

FJ4B0112 FJ4B0112

Doc No. TT4-EA-14960Revision. 1Product StandardsMOS FETFJ4B01120LFJ4B01120LSingle P-channel MOS FETUnit: mmFor Load switching circuits1.04 3TOP Features Low Drain-source ON resistance:Rds(on) typ. = 40 mVGS = -2.5 V)1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.25 Marking Symbol: 1FBOTTOM Packaging

 7.1. Size:2759K  panasonic
 fj4b0110.pdf

FJ4B0112 FJ4B0112

Doc No. TT4-EA-14958Revision. 1Product StandardsMOS FETFJ4B01100LFJ4B01100LSingle P-channel MOS FETUnit: mmFor Load switching circuits0.804 3TOP Features Low Drain-source ON resistance:Rds(on) typ. = 68 m(VGS = -2.5 V)1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.20 Marking Symbol: 1DBOTTOM Packaging

 7.2. Size:2778K  panasonic
 fj4b0111.pdf

FJ4B0112 FJ4B0112

Doc No. TT4-EA-14953Revision. 1Product StandardsMOS FETFJ4B01110LFJ4B01110LSingle P-channel MOS FETUnit: mmFor Load switching circuits0.6043TOP Features Drain-source ON resistance:Rds(on) typ. = 141 m( VGS = -2.5 V )1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.15 Marking Symbol: 1EBOTTOM Packaging

 8.1. Size:714K  panasonic
 fj4b0124.pdf

FJ4B0112 FJ4B0112

Doc No. TT4-EA-15007Revision. 1Product StandardsMOS FETFJ4B01240LFJ4B01240LSingle P-channel MOS FETUnit: mmFor Load switching / Battery Management circuitsTOP Features Low Drain-source ON resistance:Rds(on) typ. = 21 mVGS = -3.2 V) CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant) Marking Symbol: 1JBOTTOM Packaging

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top