FKI07076 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FKI07076
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 42 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 55 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 91.6 nC
Tiempo de subida (tr): 10.1 nS
Conductancia de drenaje-sustrato (Cd): 575 pF
Resistencia entre drenaje y fuente RDS(on): 0.0069 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET FKI07076
FKI07076 Datasheet (PDF)
fki07076.pdf
75 V, 55 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET FKI07076 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 55 A RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate Charge
fki07076.pdf
isc N-Channel MOSFET Transistor FKI07076FEATURESDrain Current I =55A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
fki07117.pdf
75 V, 42 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET FKI07117 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 42 A RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------25.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate Charge
fki07174.pdf
75 V, 31 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET FKI07174 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate Charge
fki07117.pdf
isc N-Channel MOSFET Transistor FKI07117FEATURESDrain Current I =42A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
fki07174.pdf
isc N-Channel MOSFET Transistor FKI07174FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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