FKI07076 Todos los transistores

 ..1. Size:263K  sanken-ele
 fki07076.pdf

75 V, 55 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET FKI07076 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 55 A RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate Charge

 ..2. Size:252K  inchange semiconductor
 fki07076.pdf

isc N-Channel MOSFET Transistor FKI07076 FEATURES Drain Current I =55A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R =6.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:263K  sanken-ele
 fki07117.pdf

75 V, 42 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET FKI07117 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 42 A RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------25.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate Charge

 9.2. Size:263K  sanken-ele
 fki07174.pdf

75 V, 31 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET FKI07174 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate Charge

 9.3. Size:251K  inchange semiconductor
 fki07117.pdf

isc N-Channel MOSFET Transistor FKI07117 FEATURES Drain Current I =42A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R =9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.4. Size:252K  inchange semiconductor
 fki07174.pdf

isc N-Channel MOSFET Transistor FKI07174 FEATURES Drain Current I =31A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R =14.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose