FKI07076 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FKI07076
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10.1 nS
   Cossⓘ - Capacitancia de salida: 575 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0069 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET FKI07076

FKI07076 Datasheet (PDF)

..1. Size:263K sanken-ele
fki07076.pdf

75 V, 55 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET FKI07076 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 55 A RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate Charge

..2. Size:252K inchange semiconductor
fki07076.pdf

isc N-Channel MOSFET Transistor FKI07076FEATURESDrain Current I =55A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. Size:263K sanken-ele
fki07117.pdf

75 V, 42 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET FKI07117 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 42 A RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------25.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate Charge

9.2. Size:263K sanken-ele
fki07174.pdf

75 V, 31 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET FKI07174 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate Charge

9.3. Size:251K inchange semiconductor
fki07117.pdf

isc N-Channel MOSFET Transistor FKI07117FEATURESDrain Current I =42A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.4. Size:252K inchange semiconductor
fki07174.pdf

isc N-Channel MOSFET Transistor FKI07174FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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