FKI07076
MOSFET. Datasheet pdf. Equivalent
Type Designator: FKI07076
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 55
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 91.6
nC
trⓘ - Rise Time: 10.1
nS
Cossⓘ -
Output Capacitance: 575
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0069
Ohm
Package:
TO-220F
FKI07076
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FKI07076
Datasheet (PDF)
..1. Size:263K sanken-ele
fki07076.pdf 
75 V, 55 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET FKI07076 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 55 A RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate Charge
..2. Size:252K inchange semiconductor
fki07076.pdf
isc N-Channel MOSFET Transistor FKI07076FEATURESDrain Current I =55A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:263K sanken-ele
fki07117.pdf
75 V, 42 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET FKI07117 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 42 A RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------25.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate Charge
9.2. Size:263K sanken-ele
fki07174.pdf
75 V, 31 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET FKI07174 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate Charge
9.3. Size:251K inchange semiconductor
fki07117.pdf
isc N-Channel MOSFET Transistor FKI07117FEATURESDrain Current I =42A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.4. Size:252K inchange semiconductor
fki07174.pdf
isc N-Channel MOSFET Transistor FKI07174FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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