N0300P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: N0300P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 78 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
Paquete / Cubierta: SC-96
Búsqueda de reemplazo de MOSFET N0300P
N0300P Datasheet (PDF)
n0300p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
vn0300l.rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN0300L/DTMOS FET TransistorVN0300L3 DRAINNChannel EnhancementMotorola Preferred Device2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 V 123DrainGate Voltage VDGR 60 VGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO
n0300n.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
vn0300 vn0300 vn0300l.pdf
VN0300N-Channel Enhancement-ModeVertical DMOS FETFeatures General DescriptionThis enhancement-mode (normally-off) transistor utilizes Free from secondary breakdowna vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power handling capab
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ME7620-G
History: ME7620-G
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918