N0300P Specs and Replacement
Type Designator: N0300P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 78 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: SC-96
N0300P substitution
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N0300P datasheet
n0300p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
vn0300l.rev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN0300L/D TMOS FET Transistor VN0300L 3 DRAIN N Channel Enhancement Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V 1 2 3 Drain Gate Voltage VDGR 60 V Gate Source Voltage CASE 29 04, STYLE 22 Continuous VGS 20 Vdc TO 92 (TO ... See More ⇒
n0300n.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
vn0300 vn0300 vn0300l.pdf
VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes Free from secondary breakdown a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power handling capab... See More ⇒
Detailed specifications: PK6D0BA, SVF830T, SVF830D, SVF830MJ, SVF830FJ, SVF830F, N0100P, N0300N, K4145, N0301N, N0301P, N0302P, N0400P, N0412N, N0413N, NT4N03, NTA4001NT1
Keywords - N0300P MOSFET specs
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