N0300P - описание и поиск аналогов

 

N0300P. Аналоги и основные параметры

Наименование производителя: N0300P

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 78 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.072 Ohm

Тип корпуса: SC-96

Аналог (замена) для N0300P

- подборⓘ MOSFET транзистора по параметрам

 

N0300P даташит

 ..1. Size:255K  renesas
n0300p.pdfpdf_icon

N0300P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:54K  motorola
vn0300l.rev1.pdfpdf_icon

N0300P

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN0300L/D TMOS FET Transistor VN0300L 3 DRAIN N Channel Enhancement Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V 1 2 3 Drain Gate Voltage VDGR 60 V Gate Source Voltage CASE 29 04, STYLE 22 Continuous VGS 20 Vdc TO 92 (TO

 9.2. Size:251K  renesas
n0300n.pdfpdf_icon

N0300P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:340K  supertex
vn0300 vn0300 vn0300l.pdfpdf_icon

N0300P

VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes Free from secondary breakdown a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power handling capab

Другие IGBT... PK6D0BA, SVF830T, SVF830D, SVF830MJ, SVF830FJ, SVF830F, N0100P, N0300N, K4145, N0301N, N0301P, N0302P, N0400P, N0412N, N0413N, NT4N03, NTA4001NT1

 

 

 

 

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