NTB5412NT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTB5412NT4G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 66 nC
Tiempo de subida (tr): 115 nS
Conductancia de drenaje-sustrato (Cd): 440 pF
Resistencia entre drenaje y fuente RDS(on): 0.014 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET NTB5412NT4G
NTB5412NT4G Datasheet (PDF)
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ntb5411n ntp5411n.pdf
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ntb5404n ntp5404n.pdf
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ntb5404nt4g ntp5404nrg.pdf
NTB5404N, NTP5404N,NVB5404NPower MOSFET40 V, 167 A, Single N-Channel, D2PAK &TO-220Features Low RDS(on)http://onsemi.com High Current CapabilityID MAX Low Gate ChargeV(BR)DSS RDS(ON) MAX (Note 1) AEC-Q101 Qualified and PPAP Capable - NVB5404N40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS CompliantApplicationsD Electronic Brake
ntb5405ng.pdf
NTB5405N, NVB5405NPower MOSFET40 V, 116 A, Single N-Channel, D2PAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC-Q101 Qualified and PPAP Capable - NVB5405NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 4.9 m @ 10 V 116 AApplications Electronic Brake SystemsN-Channel
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ntb5405n.pdf
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